- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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86,644
In-stock
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Nexperia | MOSFET P-CH DMOS 50V 130MA | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 6 Ohms | Enhancement | ||||||
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271,359
In-stock
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Fairchild Semiconductor | MOSFET SOT-23 N-CH LOGIC | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||||
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14,505
In-stock
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Diodes Incorporated | MOSFET N-Chnl 240V | 40 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 6 Ohms | Enhancement | ||||||
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4,059
In-stock
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Diodes Incorporated | MOSFET N-Chnl 240V | 40 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 500 mA | 6 Ohms | Enhancement | ||||||
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13,599
In-stock
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Diodes Incorporated | MOSFET -50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 6 Ohms | Enhancement | ||||||
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924
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 6 Ohms | 3 V | 10 nC | Enhancement | ||||
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960,000
In-stock
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onsemi | MOSFET 100V 170mA N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||||
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13,147
In-stock
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Fairchild Semiconductor | MOSFET 0.17A, 100V, N-Channel SOT-23 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | 1.4 V | 0.793 nC | Enhancement | ||||
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18,753
In-stock
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Diodes Incorporated | MOSFET 100V 360mW | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||||
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12,852
In-stock
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Fairchild Semiconductor | MOSFET 50V N-CH Logic Level | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 50 V | 210 mA | 6 Ohms | Enhancement | |||||||||
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45,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 800mA IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 800 mA | 6 Ohms | Enhancement | CoolMOS | |||||
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2,785
In-stock
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onsemi | MOSFET NCH 120MA 100V SOT23 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 270 mA | 6 Ohms | 1.2 V | 900 pC | Enhancement | ||||
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2,709
In-stock
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Diodes Incorporated | MOSFET NMOS-Single | 20 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 6 Ohms | 2 V | Enhancement | |||||
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3,577
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 10 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 100 mA | 6 Ohms | |||||||
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624
In-stock
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Diodes Incorporated | MOSFET N-Chnl 240V | 40 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 6 Ohms | Enhancement | ||||||
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2,828
In-stock
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Diodes Incorporated | MOSFET NMOS-SINGLE | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 6 Ohms | 2 V | Enhancement | |||||
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2,230
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 96pF 4nC | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 210 mA | 6 Ohms | 3 V | 4 nC | Enhancement | PowerDI | |||
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99
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 3A | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 3 A | 6 Ohms | ||||||||||
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1,366
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||||
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20,100
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 350 mA | 6 Ohms | Enhancement | ||||||
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68
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 3A | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 3 A | 6 Ohms | ||||||||||
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7,289
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 mA | 6 Ohms | 800 mV | Enhancement | |||||
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5,000
In-stock
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STMicroelectronics | MOSFET Hi Vltg NPN Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2.5 A | 6 Ohms | 18 nC | Enhancement | |||||
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16,027
In-stock
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Diodes Incorporated | MOSFET 100V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | Enhancement | ||||||
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18,000
In-stock
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onsemi | MOSFET NFET 100V 170MA 6OH | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 6 Ohms | ||||||||||
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5,699
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL ENHANCEMENT MODE | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 115 mA | 6 Ohms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 260 mA | 6 Ohms | - 800 mV | 3.7 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement | ||||||
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900
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.05 kV | 2 A | 6 Ohms | 3 V | 10 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement |
