- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Qg - Gate Charge :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,941
In-stock
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Fairchild Semiconductor | MOSFET 40V 65A N-Chnl Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 5.6 mOhms | 2 V | 41 nC | Enhancement | PowerTrench | |||
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4,027
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | ||||
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3,471
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3 | WDSON-2-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 83 A | 5.6 mOhms | OptiMOS | ||||||||||
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4,109
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | |||
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292
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 170 A | 5.6 mOhms | Enhancement | QFET | |||||
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GET PRICE |
15,130
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | OptiMOS | ||
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GET PRICE |
15,260
In-stock
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STMicroelectronics | MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 110 A | 5.6 mOhms | 2.5 V | 150 nC | Enhancement | ||||
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1,571
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
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42,800
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 5.6 mOhms | 170 nC | ||||||||
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713
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 46 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
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311
In-stock
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STMicroelectronics | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
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4,727
In-stock
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onsemi | MOSFET NFET SO8FL 30V 48A 6MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 5.6 mOhms | 10.8 nC | Enhancement | |||||
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GET PRICE |
12,000
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 130 A | 5.6 mOhms | 4 V | 170 nC | ||||
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GET PRICE |
27,700
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | |||
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3,562
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.6 mOhms | 1.6 V | 9 nC | Enhancement | NexFET | |||
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3,949
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 5.6mOhms 50nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 50 nC | Enhancement | |||||
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4,494
In-stock
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Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 20 A | 5.6 mOhms | 1.6 V | 17 nC | FastIRFet | ||||
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3,831
In-stock
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IR / Infineon | MOSFET MOSFT 30V 16.6A 6mOhm 24nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.2 A | 5.6 mOhms | 2.2 V | 24 nC | |||||||
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297
In-stock
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IR / Infineon | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 5.6 mOhms | 170 nC | ||||||||
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551
In-stock
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IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 22 A | 5.6 mOhms | 1.6 V | 17 nC | FastIRFet | ||||
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290
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 85 A | 5.6 mOhms | 2.1 V | 85 nC | Enhancement | StrongIRFET | |||
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1,516
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 114 A | 5.6 mOhms | 3 V | 61 nC | Enhancement | OptiMOS |
