- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 11 A (2)
- - 50 A (1)
- - 7 A (1)
- - 7.5 A (1)
- - 8 A (1)
- - 8.2 A (1)
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- 100 A (1)
- 120 A (6)
- 2.5 A (1)
- 20 A (1)
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- 27 A (1)
- 3.1 A (1)
- 30 A (2)
- 34 A (1)
- 35 A (1)
- 44 A (1)
- 45 A (4)
- 5.9 A (2)
- 50 A (4)
- 51.7 A (1)
- 52 A (1)
- 55 A (2)
- 6.6 A (2)
- 7.3 A (1)
- 7.5 A (1)
- 7.6 A (1)
- 7.9 A (1)
- 72 A (2)
- 8.7 A (2)
- 88 A (2)
- 90 A (2)
- Vgs th - Gate-Source Threshold Voltage :
- Package :
- Applied Filters :
55 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Fall Time | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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12,500
In-stock
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NXP Semiconductors | MOSFET PSMN022-30PL/SOT78/SIL3P | - 20 V, + 20 V | Tube | 1 Channel | 41 W | N-Channel | 30 V | 30 A | 22 mOhms | 1.3 V | 9 nC | TO-220 | 1000 | Green available | ||||||||||||
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GET PRICE |
8,530
In-stock
|
Infineon Technologies | MOSFET TRENCH >=100V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 214 W | N-Channel | 200 V | 52 A | 22 mOhms | 2 V | 43 nC | Enhancement | 10 ns | TSON-8 | 5000 | Green available | |||||||||
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GET PRICE |
46,520
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 100 W | N-Channel | 100 V | 51.7 A | 22 mOhms | 1 V | 21 nC | TO-252-3 | 2500 | Green available | ||||||||||
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532
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET | 25 V | Through Hole | Max247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 88 A | 22 mOhms | 4 V | ||||||||||||||
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11,747
In-stock
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Fairchild Semiconductor | MOSFET 40V PCH POWER TRENCH MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.2 A | 22 mOhms | Enhancement | PowerTrench | |||||||||||
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4,642
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 35 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 22 mOhms | Enhancement | ||||||||||||
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3,361
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 80V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 7.6 A | 22 mOhms | Enhancement | PowerTrench | |||||||||||
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2,569
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 34 A | 22 mOhms | Enhancement | PowerTrench | |||||||||||
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3,740
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 22 mOhms | 75 nC | ||||||||||||||
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5,310
In-stock
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IR / Infineon | MOSFET MOSFT 20V 8.7A 22mOhm 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 48 nC | |||||||||||
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657
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||||||||
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4,228
In-stock
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IR / Infineon | MOSFET MOSFT 100V 7.3A 22mOhm 34nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 7.3 A | 22 mOhms | 34 nC | ||||||||||||||
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3,740
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 22mOhms 32nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 8.7 A | 22 mOhms | 0.7 V | 32 nC | Enhancement | ||||||||||
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3,000
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 34 nC | Enhancement | ||||||||||||
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2,602
In-stock
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Fairchild Semiconductor | MOSFET -12V P-Channel PowerTrench MOSFET | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 8 A | 22 mOhms | PowerTrench | ||||||||||||
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2,519
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 13.5mOhms 75nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 22 mOhms | 75 nC | Enhancement | |||||||||||
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1,190
In-stock
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Fairchild Semiconductor | MOSFET TO-220AB N-CH POWER | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 22 mOhms | Enhancement | ||||||||||||
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1,398
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 22 mOhms | Enhancement | ||||||||||||
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1,170
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 34 nC | Enhancement | |||||||||||
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3,871
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V Enh FET 8Vgss 0.73W 2760pF | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22 mOhms | - 350 mV | 59 nC | Enhancement | ||||||||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | ||||||||||
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30,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 27 A | 22 mOhms | 2.5 V | 20 nC | Enhancement | ||||||||||
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26,190
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 22 mOhms | Enhancement | OptiMOS | |||||||||||
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1,113
In-stock
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Fairchild Semiconductor | MOSFET SINGLE N-CH 150V ULTRAFET TRENCH | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 55 A | 22 mOhms | Enhancement | ||||||||||||
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980
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 22 mOhms | Enhancement | ||||||||||||
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630
In-stock
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Fairchild Semiconductor | MOSFET 60V 55A N-Chan UniFET MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 55 A | 22 mOhms | Enhancement | ||||||||||||
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807
In-stock
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IXYS | MOSFET 44 Amps 100V 25.0 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 85 V | 44 A | 22 mOhms | 4.5 V | 33 nC | Enhancement | TrenchMV | |||||||||
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5,423
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 1.5 V | 12.5 nC | Enhancement | ||||||||||
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|
90
In-stock
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IXYS | MOSFET 120 Amps 200V 0.022 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 22 mOhms | 5 V | 152 nC | Enhancement | PolarHT, HiPerFET | |||||||||
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864
In-stock
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Infineon Technologies | MOSFET SMALL SIGNALN-CH | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.5 A | 22 mOhms | 300 mV | 4.7 nC | Enhancement |
