- Vgs - Gate-Source Voltage :
- Mounting Style :
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44 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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27,001
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | |||
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3,825
In-stock
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IR / Infineon | MOSFET MOSFT 30V 78A 3.2mOhm 36nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.2 mOhms | 36 nC | ||||||||
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3,085
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 4.2 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
14,250
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
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8,442
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
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11,092
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 93 A | 4.2 mOhms | Enhancement | OptiMOS | |||||
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9,552
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 4.2 mOhms | 1.2 V | 47 nC | Enhancement | OptiMOS | |||
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6,474
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 93A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17 A | 4.2 mOhms | Enhancement | OptiMOS | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 40 nC | Enhancement | OptiMOS | |||
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759
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | |||
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4,264
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | |||
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4,389
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
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2,134
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 4.2 mOhms | 1.2 V | 47 nC | Enhancement | OptiMOS | |||
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1,060
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | ||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.2 mOhms | 1.2 V | 50 nC | Enhancement | OptiMOS | |||
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1,401
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
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1,182
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.2 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | |||
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1,600
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | |||
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416
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | ||||
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1,380
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 70A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 4.2 mOhms | 2.2 V | 18 nC | Enhancement | OptiMOS | |||
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1,413
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 67 A | 4.2 mOhms | |||||||||||
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61
In-stock
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IXYS | MOSFET 230 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 4.2 mOhms | 2 V | 178 nC | Enhancement | ||||
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2,050
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | |||
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1,010
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.2 mOhms | 33 nC | OptiMOS | |||||
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955
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.2 mOhms | 33 nC | OptiMOS | |||||
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825
In-stock
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onsemi | MOSFET NFET U8FL 30V 71A 4.2MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.2 mOhms | 2.2 V | 26 nC | |||||
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66
In-stock
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IXYS | MOSFET 200 Amps 55V 0.0042 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 200 A | 4.2 mOhms | Enhancement | ||||||
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2,510
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 4.2 mOhms | 1.1 V | 11.8 nC | NexFET | ||||
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2,906
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 4.2 mOhms | Enhancement | OptiMOS | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 65 A | 4.2 mOhms | 4.5 V | 117 nC | Enhancement |
