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Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP057N08N3 G
1+
$1.770
10+
$1.500
100+
$1.200
500+
$1.060
RFQ
197
In-stock
Infineon Technologies MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 80 A 4.9 mOhms 2 V 69 nC Enhancement OptiMOS
IRF1405ZPBF
1+
$2.120
10+
$1.800
100+
$1.440
500+
$1.260
RFQ
384
In-stock
Infineon Technologies MOSFET MOSFT 55V 150A 4.9mOhm 120nC 20 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 55 V 150 A 4.9 mOhms   120 nC    
IRFB7545PBF
1+
$1.300
10+
$1.110
100+
$0.849
500+
$0.751
RFQ
774
In-stock
Infineon Technologies MOSFET MOSFET N CH 60V 95A TO-220AB 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 95 A 4.9 mOhms 3.7 V 75 nC   StrongIRFET
IPP057N08N3GXKSA1
1+
$1.770
10+
$1.500
100+
$1.200
500+
$1.060
RFQ
545
In-stock
Infineon Technologies MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 80 A 4.9 mOhms 2 V 69 nC Enhancement OptiMOS
IPP80P04P4-05
VIEW
RFQ
Infineon Technologies MOSFET P-Ch -40V -80A TO220-3 OptiMOS-P2   Through Hole TO-220-3     Tube 1 Channel Si P-Channel - 40 V - 80 A 4.9 mOhms       OptiMOS
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