- Mounting Style :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
28,010
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 56A 18mOhm 69nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 4 V | 100 nC | ||||||
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341
In-stock
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IXYS | MOSFET Linear Extended FBSOA Power MOSFET | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | |||||
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305
In-stock
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IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||
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2,635
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.1 A | 18 mOhms | 4 V | 69 nC | Enhancement | ||||
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4,312
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 8.3A 18mOhm 28nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 18 mOhms | 28 nC | ||||||||
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2,555
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | ||||||
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3,852
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 69 nC | Enhancement | |||||
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1,548
In-stock
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IR / Infineon | MOSFET MOSFT 100V 59A 18mOhm 82nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | ||||||||
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1,152
In-stock
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STMicroelectronics | MOSFET Nchanl 100V 0013 Ohm typ 45 A Pwr MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 45 A | 18 mOhms | 4.5 V | 25 nC | |||||
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983
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 69 nC | Enhancement | ||||||
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1,199
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 28A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 28 A | 18 mOhms | 7 nC | Enhancement | OptiMOS | ||||
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655
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 18 mOhms | Enhancement | ||||||
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90,700
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 59A 18mOhm 82nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | ||||||||
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GET PRICE |
9,760
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STri... | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 22 A | 18 mOhms | 2.5 V | 25 nC | Enhancement | |||
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296
In-stock
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IXYS | MOSFET MOSFET Id60 BVdass100 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 60 A | 18 mOhms | Enhancement | |||||||
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81
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | |||||
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145
In-stock
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IXYS | MOSFET 60 Amps 100V 18.0 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 60 A | 18 mOhms | Enhancement | |||||||
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9,000
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 38 A | 18 mOhms | 1.84 V | 70 nC | PowerTrench | |||||
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VIEW | Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 46 A | 18 mOhms | 24 nC | Enhancement | |||||
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386
In-stock
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Toshiba | MOSFET N-Ch MOS 40A 100V 93W 3110pF 61nC | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 18 mOhms | 61 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 69 nC | Enhancement | ||||||
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674
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0145 Ohm typ 30A STripFET VII | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 30 A | 18 mOhms | 4.5 V | 25 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-channel 100 V 0 013 Ohm typ 45 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 18 mOhms | 4.5 V | 25 nC | |||||
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32
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 18 mOhms | 82 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 18 mOhms | Enhancement |
