- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,631
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement | |||||
|
957
In-stock
|
onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 25 A | 18 mOhms | 1.2 V | 5 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement | |||||
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 18 mOhms | 1.2 V | 21 nC | Enhancement | |||||
|
307
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 18 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS |