- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,697
In-stock
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Fairchild Semiconductor | MOSFET Single N-Channel Power Trench Mosfet | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 10 A | 18 mOhms | 1.6 V | 14 nC | PowerTrench | |||||
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341
In-stock
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IXYS | MOSFET Linear Extended FBSOA Power MOSFET | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | |||||
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305
In-stock
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IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||
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2,477
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 11mOhms 44nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 18 mOhms | 44 nC | Enhancement | |||||
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4,739
In-stock
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Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | ||||
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3,417
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40V 25mOhm -8.6A | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.6 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | ||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | ||||
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2,598
In-stock
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Fairchild Semiconductor | MOSFET N-channel PowerTrench MOSFET | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9 A | 18 mOhms | PowerTrench | |||||||
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5,913
In-stock
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onsemi | MOSFET 20 V SANYO T6 NCH IN | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.6 A | 18 mOhms | 450 mV | 17.8 nC | Enhancement | ||||
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3,403
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 25mOhm -10V -7.2A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.2 A | 18 mOhms | - 1.8 V | 33.7 nC | Enhancement | ||||
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1,631
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement | ||||
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2,634
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X1-DFN1006-3 T&R 3K | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 180 mA | 18 mOhms | - 2.1 V | Enhancement | |||||
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2,451
In-stock
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Diodes Incorporated | MOSFET NMOS SINGLE N-CHANNL 30V 9A | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 18 mOhms | Enhancement | ||||||
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20
In-stock
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IXYS | MOSFET 138 Amps 300V 0.018 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 300 V | 138 A | 18 mOhms | 4.5 V | 258 nC | Enhancement | Polar, HiPerFET | |||
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1,563
In-stock
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 18 mOhms | 2 V | 11.6 nC | Enhancement | ||||
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580
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 140mOhm 12A | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.2 A | 18 mOhms | - 800 mV | 33.7 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement |
