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29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,436
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 5.7A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 3 V | 31 nC | CoolMOS | ||||
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599
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | ||||
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1,323
In-stock
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STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | |||||
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4,520
In-stock
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Fairchild Semiconductor | MOSFET N-Ch 200V 4.6A 0.8OHM | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 800 mOhms | |||||||
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3,445
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 1 Amp | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1 A | 800 mOhms | Enhancement | ||||||
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950
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 0.65Ohm typ 8A Zener-protect | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | |||||
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2,400
In-stock
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STMicroelectronics | MOSFET N-Ch 950V .65Ohm typ 8A Zener-protected | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | |||||
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1,581
In-stock
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onsemi | MOSFET 28V Industrial Relay Inductive Load | 12 V | SMD/SMT | SOT-23-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 28 V | 150 mA | 800 mOhms | Enhancement | ||||||
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2,175
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.3 A | 800 mOhms | Enhancement | ||||||
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3,094
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel A-FET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1.13 A | 800 mOhms | Enhancement | ||||||
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1,637
In-stock
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Fairchild Semiconductor | MOSFET 200V N Chanel MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.5 A | 800 mOhms | Enhancement | ||||||
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839
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 800 mOhms | Enhancement | ||||||
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443
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 5.6A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5.6 A | 800 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | |||
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537
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | 42 nC | Enhancement | CoolMOS | ||||
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628
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 6.9A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6.9 A | 800 mOhms | Enhancement | CoolMOS | |||||
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3,950
In-stock
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Diodes Incorporated | MOSFET 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 20 mA | 800 mOhms | - 1 V | 0.84 nC | Enhancement | ||||
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75
In-stock
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IXYS | MOSFET 8 Amps 500V 0.8 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | Enhancement | ||||||
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10,000
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.3A TO220FP-3 CoolMOS CE | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.3 A | 800 mOhms | 10.5 nC | CoolMOS | ||||||
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42
In-stock
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IXYS | MOSFET POWER MOSFET N-CHANNEL 500V 8A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | 5.5 V | 20 nC | Enhancement | PolarHV | |||
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1,470
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 7.5 A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.5 A | 800 mOhms | Enhancement | ||||||
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1,038
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 9 A | 800 mOhms | Enhancement | ||||||
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179
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 9 A | 800 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 800V 13A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 800 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 13 Amps 1100V 0.92 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 13 A | 800 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 13 Amps 900V 0.8 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 13 A | 800 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 13 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 800 mOhms | Enhancement | ||||||
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1,396
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 5.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.7 A | 800 mOhms | 2.1 V | 31 nC | Enhancement | CoolMOS | |||
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473
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 5.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.6 A | 800 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | |||
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454
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 5A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 800 mOhms | 3 V | 12.4 nC | CoolMOS |
