- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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22,661
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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4,189
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 8.2mOhms 87nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.2 mOhms | 87 nC | Enhancement | |||||
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2,714
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 13.5 A | 8.2 mOhms | PowerTrench | ||||||||
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6,262
In-stock
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Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | ||||
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5,503
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13.8 A | 8.2 mOhms | Enhancement | OptiMOS | |||||
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842
In-stock
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Fairchild Semiconductor | MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 75 A | 8.2 mOhms | Enhancement | ||||||
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3,634
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | ||||
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217,600
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V -15A 8.2mOhm 87nC | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.2 mOhms | 87 nC | ||||||||
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1,872
In-stock
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STMicroelectronics | MOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 68 V | 85 A | 8.2 mOhms | 2 V | 90 nC | Enhancement | |||||
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2,275
In-stock
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Fairchild Semiconductor | MOSFET 30V 9A 11.5 OHM NCH POWER TR | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 8.2 mOhms | Enhancement | PowerTrench | |||||
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8,140
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 8.2 mOhms | Enhancement | OptiMOS | |||||
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940
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 10 A | 8.2 mOhms | - 1.1 V | 8.1 nC | Enhancement | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 8.2 mOhms | - 2.2 V | 59 nC | Enhancement | OptiMOS | |||
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8,980
In-stock
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Texas instruments | MOSFET 30V NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 8.2 mOhms | 1.5 V | 7.9 nC | NexFET | ||||
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20,000
In-stock
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Toshiba | MOSFET 40V N0Ch PWR FET 90A 126W 3000pF | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 40 V | 90 A | 8.2 mOhms | ||||||||||
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1,226
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET? Power MOSFET 8-VSON-CLIP... | 10 V, 8 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 8.2 mOhms | 1.3 V | 3.9 nC | Enhancement | NexFET | |||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | DirectFET-MP | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 8.2 mOhms | 11 nC | ||||||||
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866
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8.2 mOhms | 1.35 V to 2.35 V | 17 nC | Enhancement | ||||
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332
In-stock
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IR / Infineon | MOSFET MOSFT 30V 86A 6.5mOhm 17nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8.2 mOhms | 17 nC |
