- Manufacture :
- Mounting Style :
- Package / Case :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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92
In-stock
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IXYS | MOSFET 100V 200A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.4 mOhms | |||||||
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116,100
In-stock
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STMicroelectronics | MOSFET N-channel 30V, 80A STripFET Mosfet | 22 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 5.4 mOhms | Enhancement | ||||||
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621
In-stock
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IXYS | MOSFET 170 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
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48
In-stock
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IXYS | MOSFET 140 Amps 0V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 140 A | 5.4 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 170 Amps 75V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 5.4 mOhms | Enhancement | OptiMOS |
