- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,690
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 225 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
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1,642
In-stock
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Diodes Incorporated | MOSFET 20V N-Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.2 A | 225 mOhms | Enhancement | ||||||
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2,695
In-stock
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Diodes Incorporated | MOSFET 20V N-Chnl UMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 225 mOhms | Enhancement | ||||||
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2,121
In-stock
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Toshiba | MOSFET Vds=-30V Id=-2A 3Pin | +/- 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 225 mOhms | - 1.2 V | Enhancement | |||||
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970
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 9 A | 225 mOhms |
