- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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908
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 22A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 14.6 mOhms | Enhancement | OptiMOS | |||||
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2,482
In-stock
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onsemi | MOSFET PFET UDFN 20V 8.2A 18MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.2 A | 14.6 mOhms | - 1 V | 28 nC | Enhancement | ||||
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500
In-stock
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Texas instruments | MOSFET 12 V N-ChanNexFET? Power MOSFET 4-DSBGA | 10 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.6 A | 14.6 mOhms | 700 mV | 7.8 nC | Enhancement | ||||
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2,000
In-stock
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Diodes Incorporated | MOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 7.8 A | 14.6 mOhms | 3 V | 26.4 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 7.8 A | 14.6 mOhms | 3 V | 26.4 nC | Enhancement | ||||
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3,811
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 9.9 A | 14.6 mOhms | 0.5 V to 1.1 V | 11 nC | Enhancement |
