- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Tradename :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,000
In-stock
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Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 11.2 mOhms | 1.8 V | 15 nC | SmallPowIR | |||||
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1,947
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET | |||||
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2,395
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.2 mOhms | 2 V | 30 nC | Enhancement | |||||
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925
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET | |||||
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671
In-stock
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Toshiba | MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 60 A | 11.2 mOhms | |||||||||||
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GET PRICE |
30,000
In-stock
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Vishay Semiconductors | MOSFET 80V Vds 46A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 46 A | 11.2 mOhms | 2.5 V | 35 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.2 mOhms | 2 V | 30 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-CH MOS 60V 28A | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 28 A | 11.2 mOhms |