- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,000
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 55 A | 11.5 mOhms | Enhancement | PowerTrench | |||||
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7,215
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 11.5 mOhms | Enhancement | PowerTrench | |||||
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4,262
In-stock
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Fairchild Semiconductor | MOSFET PT8P 20/8V power PQFN33 with cu wire | 8 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 56 A | 11.5 mOhms | - 400 mV | 87 nC | Enhancement | PowerTrench | |||
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2,164
In-stock
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Fairchild Semiconductor | MOSFET 60V N-ChUltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10.6 A | 11.5 mOhms | Enhancement | UltraFET | |||||
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1,316
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 11.5 mOhms | Enhancement | OptiMOS | |||||
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1,153
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 62 A | 11.5 mOhms | Enhancement | PowerTrench | |||||
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4,836
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 11.5 mOhms | Enhancement | OptiMOS | |||||
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2,518
In-stock
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onsemi | MOSFET Single N-Channel 60V,29A,11.5mohm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 29 A | 11.5 mOhms | |||||||||
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288
In-stock
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Toshiba | MOSFET MOSFET NCh12.2ohm 10V 10uA VDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 22 A | 11.5 mOhms | 2 V to 4 V | 28 nC | Enhancement | |||||
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3,314
In-stock
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onsemi | MOSFET Single N-Channel 60V,29A,11.5mohm | SMD/SMT | WDFN-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 29 A | 11.5 mOhms | |||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 30 Volt 40 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 11.5 mOhms | Enhancement | ||||||
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800
In-stock
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onsemi | MOSFET NFET 60V .016R TR | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 11.5 mOhms | 2 V | 81 nC | Enhancement | ||||
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VIEW | onsemi | MOSFET Pwr MOSFET 60V 29A 11.5mOhm SGL N-CH | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 29 A | 11.5 mOhms | |||||||||||
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VIEW | onsemi | MOSFET Pwr MOSFET 60V 29A 11.5mOhm SGL N-CH | WDFN-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 29 A | 11.5 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET MOSFET N-CH 60V 13A | SOP-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 13 A | 11.5 mOhms |
