- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,578
In-stock
|
onsemi | MOSFET T6 60V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13.3 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
|
|
2,033
In-stock
|
Toshiba | MOSFET U-MOSVIII-H 80V 40A 18nC MOSFET | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 13.3 mOhms | 4 V | 18 nC | Enhancement | ||||||
|
|
909
In-stock
|
Texas instruments | MOSFET 60V N-Chnl NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 13.3 mOhms | 1.9 V | 19 nC | NexFET | ||||
|
|
22,710
In-stock
|
Texas instruments | MOSFET 30V N-Chan NexFET? Pwr MOSFET 8-VSONP | 20 V | SMD/SMT | VSONP-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 13.3 mOhms | |||||||||
|
|
VIEW | Toshiba | MOSFET N-CH MOS 40V 12A | SOP-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 13.3 mOhms |
