- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Factory Pack Quantity | RoHS | |
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GET PRICE |
4,692
In-stock
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Infineon Technologies | MOSFET TRENCH >=100V | - 20 V, + 20 V | Tray | 1 Channel | 83 W | 100 V | 40 A | 10.3 mOhms | 1.7 V | 12 nC | 5000 | Green available | ||||||||||
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GET PRICE |
56,155
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||||
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22,670
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||||
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4,205
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10.3 A | 10.3 mOhms | 4.8 V | 35 nC | Enhancement | Directfet | ||||||
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11,660
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 84A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.3 mOhms | 2 V | 87 nC | Enhancement | |||||||
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GET PRICE |
87,300
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 12.1mOhms 77nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 77 nC | ||||||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||||
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440
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement | |||||||
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20,300
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 84A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.3 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | ||||||
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GET PRICE |
11,000
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||||
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593
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 105A 11.8mOhm 73nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 73 nC | Enhancement | ||||||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC | 20 V | SMD/SMT | DirectFET-ST | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 10.3 mOhms | 11 nC | |||||||||||
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4,015
In-stock
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Infineon Technologies | MOSFET 25V 7.3nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 16 A | 10.3 mOhms | 1.8 V | 7.7 nC | SmallPowIR | |||||||
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20,000
In-stock
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Toshiba | MOSFET 40V N0Ch PWR FET 40A 47W 1920pF | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 10.3 mOhms | 2.3 V | 29 nC | Enhancement | |||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 35A 40V 58W 1370pF 0.0103 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 35 A | 10.3 mOhms |
