- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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141,800
In-stock
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Texas instruments | MOSFET 20-V P-CH NexFET Pwr MOSFET | - 8 V | SMD/SMT | WSON-FET-6 | - 40 C | + 85 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.6 A | 23.9 mOhms | - 850 mV | 3.6 nC | NexFET | ||||
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VIEW | Siliconix / Vishay | MOSFET 200V PowerPAK SO-8 Typ Rds(on) 24mohm | 20 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 200 V | 35.4 A | 23.9 mOhms | 4 V | 20 nC | ThunderFET |