- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,000
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | |||||||
|
|
1,882
In-stock
|
Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | ||||
|
|
351
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 4 A | 4.2 Ohms | Enhancement | QFET | |||||
|
|
2,195
In-stock
|
Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | ||||
|
|
289
In-stock
|
Fairchild Semiconductor | MOSFET 900V, 4A, NCH MOSFET | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 900 V | 4 A | 4.2 Ohms | |||||||||||
|
|
1,041
In-stock
|
Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | ||||
|
|
400
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | |||||||
|
|
1,421
In-stock
|
Infineon Technologies | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | 800 mV | 6.4 nC | Enhancement | ||||
|
|
1,245
In-stock
|
Infineon Technologies | MOSFET SIPMOS Sm-Signal 240V 6Ohm 350mA | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | 800 mV | 6.4 nC | Enhancement | ||||
|
|
7,408
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 370 mA | 4.2 Ohms | |||||||||||
|
|
838
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | |||||||
|
|
5,380
In-stock
|
onsemi | MOSFET PCH 4V DRIVE SERIES | SOT-323-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 370 mA | 4.2 Ohms | |||||||||||
|
|
1,930
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | - 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 0.27 A | 4.2 Ohms | - 2.3 V | 1.8 nC | Enhancement | ||||
|
|
34,000
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 4 A | 4.2 Ohms | Enhancement | QFET | |||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 240V 50mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4.2 Ohms | - 2.1 V | 5.7 nC | Depletion | ||||
|
|
VIEW | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | - 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 0.27 A | 4.2 Ohms | - 2.3 V | 1.8 nC | Enhancement |
