- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,970
In-stock
|
onsemi | MOSFET NFET U8FL 30V 41A 8MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37 A | 8.9 mOhms | 1.6 V | 16 nC | |||||
|
|
1,951
In-stock
|
IR / Infineon | MOSFET MOSFT 58A 8.9mOhm 30V 10nC Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 8.9 mOhms | 2.35 V | 10 nC | |||||||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -73A DPAK-2 OptiMOS-P2 | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 73 A | 8.9 mOhms | OptiMOS | ||||||||||
|
|
29,885
In-stock
|
Texas instruments | MOSFET P-CH Pwr MOSFET | - 12 V | SMD/SMT | VSONP-8 | - 55 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.9 mOhms | - 900 mV | 7.5 nC | Enhancement | NexFET | |||
|
|
3,000
In-stock
|
Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.9 mOhms | 1.4 V | 7.5 nC | Enhancement |
