- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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42,620
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | |||||||||
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994
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | ||||||
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GET PRICE |
14,020
In-stock
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IR / Infineon | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | ||||||||
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899
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | ||||||
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949
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | |||||||||
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653
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -21A 117mOhm 64.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 21 A | 117 mOhms | 64.7 nC | |||||||||
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809
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | - 4 V | 64.7 nC | Enhancement | |||||
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390
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | ||||||
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371
In-stock
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IR / Infineon | MOSFET AUTO -100V 1 P-CH HEXFET 117mOhms | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | |||||||||
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4,896
In-stock
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Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 117 mOhms | 850 mV | 1.04 nC | NexFET | |||||
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7,865
In-stock
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Texas instruments | MOSFET 30V,N-Ch FemtoFET MOSFET | 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.1 A | 117 mOhms | 850 mV | 1.04 nC | ||||||
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57,000
In-stock
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onsemi | MOSFET -8V -1.4A P-Channel | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 1.4 A | 117 mOhms | Enhancement | |||||||
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1,500
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 23 A | 117 mOhms | 64.7 nC | Enhancement |