- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V MICRO FOOT | +/- 8 V | SMD/SMT | MicroFoot-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.7 A | 0.017 Ohms | - 0.9 V | 81 nC | Enhancement | |||||
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5,197
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -12V -16A 7mOhm 91nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 7 mOhms | - 0.9 V | 91 nC | ||||||||
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2,126
In-stock
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Fairchild Semiconductor | MOSFET P-Channel Power Trench Mosfet | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 13 mOhms | - 0.9 V | 53 nC | PowerTrench | ||||||
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8,666
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 52 mOhms | - 0.9 V | 10.2 nC | Enhancement | |||||
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3,000
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 80 mOhms | - 0.9 V | 10.4 nC | Enhancement | |||||
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350,200
In-stock
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Nexperia | MOSFET 30V 230 MA P-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 230 mA | 2.8 Ohms | - 0.9 V | 0.55 nC | Enhancement | |||||
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2,347
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 200 mOhms | - 0.9 V | 10.2 nC | Enhancement | |||||
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555
In-stock
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Texas instruments | MOSFET -20V, P-channel NexFET Pwr MOSFET | 12 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 60 A | 10.1 mOhms | - 0.9 V | 10.8 nC | Enhancement | NexFET | ||||
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240,000
In-stock
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Diodes Incorporated | MOSFET 25V P-Ch Enh FET 360pD -25Vdss -8Vgss | - 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 166 mA | 10 Ohms | - 0.9 V | 0.35 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 80 mOhms | - 0.9 V | 10.4 nC | Enhancement | PowerDI | ||||
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VIEW | Vishay Semiconductors | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 25 A | 0.0051 Ohms | - 0.9 V | 151 nC | Enhancement |