- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
5,750
In-stock
|
Nexperia | MOSFET PMV65XP/TO-236AB/REEL 11" Q3/T | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.3 A | 58 mOhms | - 900 mV | 7.7 nC | Enhancement | ||||
|
|
3,078
In-stock
|
Nexperia | MOSFET PMPB15XP/SOT1220/REEL 7" Q1/T1 | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.8 A | 15 mOhms | - 900 mV | 100 nC | Enhancement | ||||
|
|
6,436
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.4 A | 48 mOhms | - 900 mV | 7.7 nC | Enhancement | ||||
|
|
2,140
In-stock
|
Nexperia | MOSFET PMV50UPE/TO-236AB/REEL 7" Q3/T | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 50 mOhms | - 900 mV | 15.7 nC | Enhancement | ||||
|
|
4,878
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 77 mOhms | - 900 mV | 5 nC | Enhancement | ||||
|
|
2,880
In-stock
|
Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.23 A | 45 mOhms | - 900 mV | 7.6 nC | Enhancement | ||||
|
|
2,955
In-stock
|
Nexperia | MOSFET PMPB47XP/SOT1220/REEL 7" Q1/T1 | +/- 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 47 mOhms | - 900 mV | 21 nC | Enhancement | ||||
|
|
2,250
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 40 mOhms | - 900 mV | 10.2 nC | Enhancement | ||||
|
|
160,400
In-stock
|
Texas instruments | MOSFET 12V P-channel NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.2 A | 44 mOhms | - 900 mV | 3.8 nC | Enhancement | NexFET | |||
|
|
29,885
In-stock
|
Texas instruments | MOSFET P-CH Pwr MOSFET | - 12 V | SMD/SMT | VSONP-8 | - 55 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.9 mOhms | - 900 mV | 7.5 nC | Enhancement | NexFET | |||
|
|
8,870
In-stock
|
Nexperia | MOSFET 12V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.9 A | 55 mOhms | - 900 mV | 10 nC | Enhancement | ||||
|
|
2,966
In-stock
|
Nexperia | MOSFET PMPB15XP/SOT1220/REEL 7" Q3/T4 | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.8 A | 15 mOhms | - 900 mV | 100 nC | Enhancement | ||||
|
|
2,958
In-stock
|
onsemi | MOSFET PCH 1.5V DRIVE SERIE | +/- 9 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2 A | 1.04 Ohms | - 900 mV | 2.3 nC | Enhancement |
