- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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975
In-stock
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STMicroelectronics | MOSFET N-CH 100V 0.0068Ohm 80A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 8 mOhms | 2 V to 4 V | 61 nC | |||||
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55
In-stock
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IXYS | MOSFET DIODE Id14 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 720 mOhms | 5.5 V | 61 nC | Enhancement | PolarHV, HiPerFET | |||
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1,330
In-stock
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IR / Infineon | MOSFET MOSFT 55V 61A 14mOhm 61nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 17 mOhms | 61 nC | ||||||||
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183
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 20mOhms 61nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 20 mOhms | - 2.04 V | 61 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET 100V 1 N-CH HEXFET 26mOhms 61nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6.9 A | 26 mOhms | 61 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 12 mOhms | 1 V to 3 V | 61 nC | Enhancement | ||||
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421
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14mOhms 61nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 17 mOhms | 1 V to 3 V | 61 nC | Enhancement | ||||
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822
In-stock
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Infineon Technologies | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 112 A | 5.9 mOhms | 3 V | 61 nC | Enhancement | OptiMOS |
