- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,190
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 29 A | 0.0036 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | |||
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20
In-stock
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IR / Infineon | MOSFET MOSFT 40V 200A 3.1mOhm 75nC Log Lvl | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 3.1 mOhms | 2.7 V | 110 nC | |||||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 40 V 1.4 mOhm 180 A STripFET III | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.4 mOhms | 2 V | 110 nC | Enhancement | STripFET | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 1.40 mOhm STripFET III 180A | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.4 mOhms | 4 V | 110 nC |
