- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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799
In-stock
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Fairchild Semiconductor | MOSFET 800V SuperFET2 N-Chnl Mosfet | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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863
In-stock
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IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
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1,816
In-stock
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Infineon Technologies | MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 13.9 mOhms | 4 V | 58 nC | Enhancement | ||||
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395
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
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997
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET MOSFET N CH 60V 75A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 75 A | 6 mOhms | 3.7 V | 58 nC | StrongIRFET | ||||
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1,107
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 7.9 mOhms | 3.7 V | 58 nC | StrongIRFET | ||||
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224
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | ||||||||
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457
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | |||
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60
In-stock
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IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
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1,544
In-stock
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Infineon Technologies | MOSFET 100V 10.7mOhm 62A HEXFET 140W 50nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 62 A | 10.7 mOhms | 4 V | 58 nC | Enhancement | StrongIRFET | |||
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180
In-stock
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IXYS | MOSFET 600V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | 5.5 V | 58 nC | Enhancement | PolarHV, HiPerFET | |||
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VIEW | IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 58 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | |||
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VIEW | IXYS | MOSFET 120 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 6.1 mOhms | 4 V | 58 nC | Enhancement | TrenchT2 | |||
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14
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 8.5mOhms 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 2 V to 4 V | 58 nC | Enhancement |
