- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,210
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290mOhm D2PAK PKG | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | ||||
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1,442
In-stock
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onsemi | MOSFET NFET SO8FL 100V 132A 4.8M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 132 A | 3.8 mOhms | 2 V | 58 nC | Enhancement | |||||
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3,979
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement | OptiMOS | ||||
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3,823
In-stock
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IR / Infineon | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 8.5 mOhms | 58 nC | Enhancement | ||||||
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3,857
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.1 mOhms | 2.2 V | 58 nC | ||||||||
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4,000
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 58A 13.5 mOhm, 58 nC Qg | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 13.5 mOhms | 58 nC | StrongIRFET | |||||||||
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2,500
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15 A | 0.013 Ohms | - 2.5 V | 58 nC | Enhancement | TrenchFET | ||||
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998
In-stock
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IR / Infineon | MOSFET 1 P-CH -100V HEXFET 200mOhms 38.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 14 A | 200 mOhms | - 4 V | 58 nC | Enhancement | |||||
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4,973
In-stock
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Toshiba | MOSFET N-CH Mosfet 60V | 20 V | SMD/SMT | DSOP-Advance-8 | - | - | Reel | 1 Channel | Si | N-Channel | 100 V | 92 A | 3.7 mOhms | 2 V | 58 nC | Enhancement | |||||
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19,440
In-stock
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Toshiba | MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 93 A | 3.7 mOhms | 2 V to 4 V | 58 nC | UMOSVIII | |||||
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555
In-stock
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Texas instruments | MOSFET 60V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 1.5 V | 58 nC | Enhancement | |||||
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2,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.5 mOhms | 3.7 V | 58 nC | StrongIRFET | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 78.6 A | 6.1 mOhms | - 3.1 V | 58 nC | Enhancement | |||||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET P-Ch -30V FET 27W -20A 2260pF 58nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 12.4 mOhms | 58 nC |