- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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454,600
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | |||||
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2,368
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | |||||
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1,079
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | |||||
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636
In-stock
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IR / Infineon | MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.1 mOhms | 2.35 V | 39 nC |
