- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 0.007 Ohms (1)
- 0.008 Ohms (1)
- 0.13 Ohms (1)
- 1.2 mOhms (1)
- 1.4 mOhms (1)
- 1.5 mOhms (1)
- 120 mOhms (1)
- 2 mOhms (1)
- 20 mOhms (2)
- 20.3 mOhms (2)
- 22.5 mOhms (1)
- 28.5 mOhms (1)
- 29 mOhms (2)
- 299 mOhms (1)
- 3.1 mOhms (1)
- 3.3 mOhms (1)
- 3.9 mOhms (2)
- 340 mOhms (2)
- 360 mOhms (1)
- 380 mOhms (2)
- 4.9 mOhms (1)
- 41 mOhms (1)
- 7 mOhms (1)
- 8 mOhms (1)
- 97 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,069
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4 V | 39 nC | Enhancement | Directfet | |||
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1,175
In-stock
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Fairchild Semiconductor | MOSFET PQFN88 PKG, 199mohm, 600V, SuperFET2 | 20 V | SMD/SMT | Power-88-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 12 A | 299 mOhms | 3.5 V | 39 nC | SuperFET II | ||||
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4,557
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | |||
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4,351
In-stock
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Infineon Technologies | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 22.5 mOhms | 4 V | 39 nC | |||||
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454,600
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||
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GET PRICE |
61,110
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 22 A | 0.13 Ohms | 3 V | 39 nC | Enhancement | |||
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2,360
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
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2,490
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
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2,368
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||
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2,850
In-stock
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IR / Infineon | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 28.5 mOhms | 4 V | 39 nC | Enhancement | ||||
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2,475
In-stock
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Fairchild Semiconductor | MOSFET UltraFET Power MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 20 A | 41 mOhms | 1.6 V | 39 nC | |||||
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2,157
In-stock
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Vishay Semiconductors | MOSFET 40V 16A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 16 A | 0.008 Ohms | 1.5 V | 39 nC | Enhancement | TrenchFET | |||
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79,600
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.4mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.4 mOhms | 39 nC | ||||||||
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1,527
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 14A 9mOhm 39nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 8 mOhms | 39 nC | Enhancement | |||||
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2,996
In-stock
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Vishay Semiconductors | MOSFET 30V 16A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 0.007 Ohms | 1.5 V | 39 nC | Enhancement | TrenchFET | |||
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1,280
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15.1 A | 360 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
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210
In-stock
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IXYS | MOSFET -100V -18A | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 18 A | 120 mOhms | - 2.5 V to - 4.5 V | 39 nC | Enhancement | ||||
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1,182
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | ||||
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630
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 10.6A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 380 mOhms | 39 nC | CoolMOS | |||||
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4,725
In-stock
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Texas instruments | MOSFET 30V N Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.5 mOhms | 1.4 V | 39 nC | NexFET | ||||
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250
In-stock
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Texas instruments | MOSFET 30V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.2 mOhms | 1.15 V | 39 nC | Enhancement | ||||
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963
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20.3 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | |||
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1,999
In-stock
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Toshiba | MOSFET UMOSVIII 40V 4.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 3.3 mOhms | 2.5 V | 39 nC | Enhancement | ||||
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800
In-stock
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Fairchild Semiconductor | MOSFET N-Chan PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 37 A | 97 mOhms | 4 V | 39 nC | Enhancement | PowerTrench | |||
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VIEW | Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 39 A | 2 mOhms | 39 nC | Directfet | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20.3 mOhms | 1.2 V | 39 nC | Enhancement | ||||
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1,679
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.9 mOhms | 1.7 V | 39 nC | |||||
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636
In-stock
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IR / Infineon | MOSFET MOSFT 30V 160A 39nC 3.1mOhm Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.1 mOhms | 2.35 V | 39 nC | |||||||
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1,680
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 39nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 7 mOhms | 4 V | 39 nC | Enhancement | ||||
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72
In-stock
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IR / Infineon | MOSFET MOSFT 150V 35A 35mOhm 39nC Qg | 20 V | SMD/SMT | DirectFET-MZ | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4.9 V | 39 nC |
