- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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455
In-stock
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Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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2,490
In-stock
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Fairchild Semiconductor | MOSFET 600V 2.4A N-Channel Q-FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 3.4 Ohms | 10.5 nC | Enhancement | QFET | ||||
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968
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | ||||
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2,427
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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5,865
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIE | +/- 12 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 30 mOhms | - 1.4 V | 10.5 nC | Enhancement | |||||
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818
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | ||||
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GET PRICE |
14,570
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 5.4 A | 3.51 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||
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697
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.1Ohm 3A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 2.1 Ohms | 4 V | 10.5 nC | Enhancement | ||||
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2,789
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.3 A | 3.51 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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1,009
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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3,361
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 2.22 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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2,278
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 3.1A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 3.1 A | 1.5 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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3,770
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 15 mOhms | 1 V | 10.5 nC | Enhancement | ||||
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2,470
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | - 4.8 A | 36 mOhms | - 2 V | 10.5 nC | Enhancement | ||||
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1,825
In-stock
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Nexperia | MOSFET PMN50UPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 50 mOhms | - 0.6 V | 10.5 nC | Enhancement | |||||
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10,000
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.3A TO220FP-3 CoolMOS CE | 20 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.3 A | 800 mOhms | 10.5 nC | CoolMOS | ||||||
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445
In-stock
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Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 600V 380pF | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | ||||
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206
In-stock
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Toshiba | MOSFET DTMOSIV 600V 900mOhm 5.4A 60W 380pF10.5nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | DTMOSIV | |||||
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250
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.2 A | 1 Ohms | 2.5 V | 10.5 nC | Enhancement | ||||
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GET PRICE |
85,000
In-stock
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Toshiba | MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5.4 A | 770 mOhms | 2.7 V to 3.7 V | 10.5 nC | Enhancement | ||||
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24,950
In-stock
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Infineon Technologies | MOSFET | 16 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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500
In-stock
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Infineon Technologies | MOSFET | 16 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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14,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerD3333-8,2K | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 23 mOhms | 10.5 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.2 A | 1.02 Ohms | 2.5 V | 10.5 nC | Enhancement | ||||
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2,630
In-stock
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IR / Infineon | MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 10.5 nC | Enhancement | |||||
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9,990
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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866
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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326
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 68 mOhms | 10.5 nC | ||||||
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80
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12.8A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS |
