- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,299
In-stock
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IR / Infineon | MOSFET MOSFT 20V 6.5A 30mOhm 15nC Log Lvl | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 30 mOhms | 1.2 V | 15 nC | ||||
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4,756
In-stock
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Nexperia | MOSFET PMV20XNEA/TO-236AB/REEL 7" Q3/ | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.3 A | 16 mOhms | 750 mV | 15 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET AUTO -20V 1 N-CH HEXFET 60mOhms | 12 V | SMD/SMT | SO-8 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.4 A | 60 mOhms | 15 nC | Enhancement |
