- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,462
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
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17,767
In-stock
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onsemi | MOSFET NFET DPAK 60V 18A 43 MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 39 mOhms | 15 nC | ||||||
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5,816
In-stock
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IR / Infineon | MOSFET MOSFT 200V 5A 600mOhm 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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8,413
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.5 mOhms | 15 nC | OptiMOS | |||||
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26,250
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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2,311
In-stock
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Fairchild Semiconductor | MOSFET 40V 15A DPAK N-Chnl PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 14 mOhms | 2 V | 15 nC | Enhancement | PowerTrench | |||
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5,820
In-stock
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onsemi | MOSFET NFET 60V 18A 43MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 39 mOhms | 15 nC | ||||||
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41,770
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 8 mOhms | 1.35 V to 2.35 V | 15 nC | Enhancement | ||||
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888
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 325 mOhms | 2 V | 15 nC | Enhancement | ||||
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1,860
In-stock
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STMicroelectronics | MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH 3 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 2.2 A | 3.6 Ohms | 15 nC | Enhancement | |||||
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3,000
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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1,524
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
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1,211
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8 mOhms | 15 nC | ||||||||
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1,055
In-stock
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Vishay Semiconductors | MOSFET 60V 15A 37W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 15 A | 0.036 Ohms | 1.5 V | 15 nC | Enhancement | TrenchFET | |||
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1,066
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 18A 60mOhm 10nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 18 A | 105 mOhms | 2 V | 15 nC | |||||
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1,720
In-stock
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IR / Infineon | MOSFET MOSFT 85A 5.8mOhm 30V 15nC Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 5.8 mOhms | 2.35 V | 15 nC | |||||||
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86,000
In-stock
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Toshiba | MOSFET N-Ch 7A 60W FET 600V 490pF 15nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 2.7 V to 3.7 V | 15 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6.8 A | 660 mOhms | 2.5 V | 15 nC | Enhancement | ||||
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1,652
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 590 mOhms | 2.5 V | 15 nC | Enhancement | ||||
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1,986
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 19A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.1 A | 650 mOhms | 3 V | 15 nC | |||||
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2,516
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 590 mOhms | 2.5 V | 15 nC | Enhancement | CoolMOS |
