- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5,845
In-stock
|
Fairchild Semiconductor | MOSFET 40V 80A NChnl Logic Level Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.9 mOhms | 1 V | 83 nC | Enhancement | PowerTrench | ||||
|
2,080
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 2.6 mOhms | 2 V | 83 nC | Enhancement | PowerTrench | ||||
|
3,206
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.1 mOhms | 2.1 V | 83 nC | Enhancement | |||||
|
2,633
In-stock
|
Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 2 V to 4 V | 83 nC | Enhancement | |||||
|
2,607
In-stock
|
Vishay Semiconductors | MOSFET 30V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 0.008 Ohms | - 2.5 V | 83 nC | Enhancement | TrenchFET | ||||
|
107,100
In-stock
|
IR / Infineon | MOSFET 100V SINGLE N-CH 9mOhms 83nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | |||||||||
|
GET PRICE |
58,400
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | ||||||||
|
296
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | |||||||||
|
150
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.1 mOhms | 2.1 V | 83 nC | Enhancement | OptiMOS | ||||
|
152
In-stock
|
Infineon Technologies | MOSFET Auto Q101 300V SGL N-CH HEXFET | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 83 nC | ||||||||
|
844
In-stock
|
Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 59 A | 9 mOhms | 3.7 V | 83 nC | Enhancement | StrongIRFET | ||||||
|
540
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 7.2 mOhms | 83 nC | |||||||||
|
GET PRICE |
8,622
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 83 nC | ||||||||
|
238
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 27 A | 85 mOhms | 4 V | 83 nC | |||||||
|
708
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 4.8 mOhms | 2.2 V | 83 nC | Enhancement | OptiMOS |