- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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16,279
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 3.2A SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.2 A | 47 mOhms | 1.3 V | 5.6 nC | Enhancement | ||||
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7,730
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | OptiMOS | |||
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3,450
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | OptiMOS | |||
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8,449
In-stock
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onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3 A | 215 mOhms | - 1.4 V | 5.6 nC | Enhancement | ||||
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1,815
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 4.5A TSOP-6 | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | ||||
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1,401
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 130Vdss 20Vgss | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 130 V | 1 A | 410 mOhms | 2 V | 5.6 nC | Enhancement | ||||
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8,730
In-stock
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Texas instruments | MOSFET 100V, 49mOhm SON2x2 NexFET Power MOSFET 6-WSON ... | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 58 mOhms | 2.8 V | 5.6 nC | Enhancement | NexFET | |||
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2,470
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 280 mOhm | - 10 V to + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 10 A | 280 mOhms | 2.8 V | 5.6 nC | Enhancement | Z-FET | |||
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9,920
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET OptiMOS3 Sm-Signl 60V 60mOhm 1.5A | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | OptiMOS | |||
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8,036
In-stock
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onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3 A | 215 mOhms | - 1.4 V | 5.6 nC | Enhancement | ||||
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4,815
In-stock
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onsemi | MOSFET PCH 1.8V Power MOSFE | +/- 10 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3 A | 230 mOhms | - 1.3 V | 5.6 nC | Enhancement | ||||
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4,895
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 128 mOhms | 1.2 V | 5.6 nC | Enhancement | |||||
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3,000
In-stock
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onsemi | MOSFET PCH 1.8V DRIVE SERIE | +/- 10 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 215 mOhms | - 1.4 V | 5.6 nC | Enhancement |
