MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	SQM60N20-35_GE3	1+ $3.030 10+ $2.440 100+ $2.220 250+ $2.000		PDF RFQ	542 In-stock	Siliconix / Vishay	MOSFET N-Channel 200V AEC-Q101 Qualified	+/- 20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C		1 Channel	Si	N-Channel	200 V	60 A	0.028 Ohms	2.5 V	135 nC	Enhancement	TrenchFET
	IPB80P04P4L-04	1+ $1.610 10+ $1.380 100+ $1.060 500+ $0.931 1000+ $0.735		PDF RFQ	959 In-stock	Infineon Technologies	MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2	16 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	P-Channel	- 40 V	- 80 A	4.4 mOhms		135 nC		OptiMOS
	IRFS7440PBF	1+ $1.690 10+ $1.440 100+ $1.150 500+ $1.010		PDF RFQ	321 In-stock	IR / Infineon	MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, D2-Pak		SMD/SMT	TO-263-3	- 55 C	+ 175 C	Tube	1 Channel	Si	N-Channel	40 V	208 A	2.5 mOhms	3.9 V	135 nC	Enhancement	StrongIRFET

SQM60N20-35_GE3

SQM60N20-35_GE3

Siliconix / Vishay

MOSFET N-Channel 200V AEC-Q101 Qualified

Stock : 542

1+: $3.030

10+: $2.440

100+: $2.220

250+: $2.000

IPB80P04P4L-04

IPB80P04P4L-04

Infineon Technologies

MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2

Stock : 959

1+: $1.610

10+: $1.380

100+: $1.060

500+: $0.931

1000+: $0.735

IRFS7440PBF

IRFS7440PBF

IR / Infineon

MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, D2-Pak

Stock : 321

1+: $1.690

10+: $1.440

100+: $1.150

500+: $1.010

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