- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,384
In-stock
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Fairchild Semiconductor | MOSFET 40V N Chan Shielded Gate Power Trench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.1 mOhms | 3 V | 80 nC | PowerTrench Power Clip | |||||
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1,243
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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564
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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800
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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569
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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455
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.6 mOhms | 1.5 V | 80 nC | Enhancement | ||||
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1,000
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 4.5 mOhms | 2 V | 80 nC | Enhancement | ||||
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GET PRICE |
144,900
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 72A 11mOhm 80nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 72 A | 11 mOhms | 80 nC | |||||||
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520
In-stock
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IXYS | MOSFET 12 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | 6.5 V | 80 nC | Enhancement | Polar, HiPerFET | |||
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GET PRICE |
15,130
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | OptiMOS | ||
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771
In-stock
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Vishay Semiconductors | MOSFET 40V 50A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 0.01 Ohms | - 2.5 V | 80 nC | Enhancement | TrenchFET | |||
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175
In-stock
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Infineon Technologies | MOSFET AUTOMOTIVE | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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200
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 31A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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151
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 31A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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1,839
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 28 A | 28.5 mOhms | 80 nC | ||||||
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364
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 84 A | 11 mOhms | 2 V to 4 V | 80 nC | Enhancement | ||||
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390
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | TO-263-3 | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 38 A | 29.5 mOhms | 80 nC | Enhancement | ||||||
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700
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 84 A | 11 mOhms | 80 nC | Enhancement | |||||
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488
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 7.6 mOhms | 2.1 V | 80 nC | Enhancement | ||||
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63
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 22A 36mOhm 80nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 22 A | 36 mOhms | 80 nC | ||||||||
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GET PRICE |
27,700
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | |||
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12
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 8 A | 1.5 Ohms | 3 V | 80 nC | Enhancement | |||||
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3,000
In-stock
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Vishay Semiconductors | MOSFET 60V Vds 60A Id AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 4 mOhms | 2.5 V | 80 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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240
In-stock
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Infineon Technologies | MOSFET AUTOMOTIVE | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
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VIEW | STMicroelectronics | MOSFET N-channel 30V 0.0024 Ohm, 80 A, D2PAK | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3 mOhms | 80 nC | Enhancement | |||||
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495
In-stock
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STMicroelectronics | MOSFET Nchannel 30 V 0.0024 Ohm80A DPAK STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3 mOhms | 80 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.6 mOhms | 1 V to 3 V | 80 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 3.1 Ohm STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1 V to 2.5 V | 80 nC |
