- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,660
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 255 mOhms | 2 V | 21.5 nC | Enhancement | ||||
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1,238
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13 A | 255 mOhms | 3 V | 21.5 nC | |||||
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977
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 4 V | 21.5 nC | Enhancement | ||||
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590
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1.3 Ohms | 3 V | 21.5 nC | Enhancement | ||||
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1,664
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1 Ohms | 3 V | 21.5 nC | Enhancement | ||||
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9,890
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 255 mOhms | 3 V | 21.5 nC | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 255 mOhms | 3 V | 21.5 nC | |||||
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511
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 280 mOhms | 2 V | 21.5 nC | Enhancement | ||||
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3,307
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 0.61W 1788pF 21.5nC | 10 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9 A | 14 mOhms | 0.9 V | 21.5 nC | Enhancement | ||||
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554
In-stock
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Wolfspeed / Cree | MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 22 A | 120 mOhms | 1.8 V | 21.5 nC | Enhancement | ||||
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200
In-stock
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Wolfspeed / Cree | MOSFET 1000V 120mOhm G3 SiC MOSFET TO-263-7 | - 4 V, + 15 V | Through Hole | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 22 A | 120 mOhms | 1.8 V | 21.5 nC | Enhancement |