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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,490
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | |||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.5 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | |||
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2,001
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 3.3 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | |||
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25,000
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 3.7 mOhms | 2 V | 73 nC | Enhancement | OptiMOS | |||
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2,447
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 3.3 mOhms | 1 V | 73 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 3.7 mOhms | 2 V | 73 nC | Enhancement | OptiMOS |
