- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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823
In-stock
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STMicroelectronics | MOSFET N-Ch 900 Volt 11 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 880 mOhms | 113 nC | Enhancement | |||||
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2,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 22 A | 0.007 Ohms | - 2.5 V | 113 nC | Enhancement | TrenchFET | |||
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244
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8.3 A | 1.38 Ohms | 113 nC | Enhancement | |||||
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29
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 52 A | 68 mOhms | 3 V | 113 nC | Enhancement | ||||
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5,819
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K | 12 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.2 A | 25 mOhms | - 1.2 V | 113 nC | Enhancement | ||||
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VIEW | Vishay Semiconductors | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 0.007 Ohms | - 2.5 V | 113 nC | Enhancement |
