- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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23,630
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 49A 40mOhm 156nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | 156 nC | Enhancement | |||||
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993
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Chan PowerTrench MOSFET | 20 V | SMD/SMT | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 144 A | 5.5 mOhms | 156 nC | PowerTrench | |||||
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76
In-stock
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IXYS | MOSFET 4500V 2A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 2 A | 23 Ohms | 3.5 V to 5.5 V | 156 nC | Enhancement | ||||
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GET PRICE |
5,270
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 49A 40mOhm 156nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | 4 V | 156 nC | Enhancement | |||
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42
In-stock
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IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT, HiPerFET | |||
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1,704
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss PPAP | +/- 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 156 nC | Enhancement | PowerDI | |||
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VIEW | IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT |
