- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
389
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 7.7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
|
240
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
|
228
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 7.7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
|
60
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 13.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 252 mOhms | 3.5 V | 25.5 nC | Enhancement | CoolMOS | |||
|
|
6,000
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 30V PowerPAK SO-8 | + 20 V, - 16 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45.5 A | 0.0054 Ohms | 1.1 V | 25.5 nC | Enhancement |
