- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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100
In-stock
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Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 478 A | 600 uOhms | 1 V | 267 nC | Enhancement | StrongIRFET | |||||
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30
In-stock
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IXYS | MOSFET 24 Amps 1000V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 400 mOhms | 5.5 V | 267 nC | Enhancement | |||||
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3
In-stock
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Microsemi | MOSFET Power FREDFET - MOS7 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 38 A | 260 mOhms | 3 V | 267 nC | Enhancement |