- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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90
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
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88
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 50 A | 105 mOhms | 3.5 V | 152 nC | Enhancement | HiPerFET | |||
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88
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 20 A | 330 mOhms | 3.5 V | 63 nC | Enhancement | HiPerFET | |||
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62
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
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VIEW | IXYS | MOSFET Trench T2 HiperFET Power MOSFET | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | HiPerFET |
