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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Number of Channels | Configuration | Technology | Transistor Polarity | Channel Mode | Rise Time | Fall Time | Transistor Type | Product Type | Package | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | Installation style | trademark | Id-continuous drain current | Pd-power dissipation | Minimum working temperature | Package / Box | Maximum working temperature | Factory packing quantity | Vds-Drain-source breakdown voltage | Rds On-Drain-source on resistance | Vgs-gate-source voltage | Vgs th- gate-source threshold voltage | Qg-gate charge | |
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12,500
In-stock
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Infineon Technologies | HIGH POWER_NEW | 1 Channel | Single | Si | N-Channel | Enhancement | 30 ns | 6 ns | 1 N-Channel | MOSFET | Tube | 196 ns | 53 ns | MOSFETs | Through Hole | Infineon Technologies | 54 A | 245 W | -55 C | TO-247-3 | + 150 C | 240 | 650 V | 37 mOhms | -20 V, + 20 V | 3.5 V | 136 nC |
