- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,039
In-stock
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Fairchild Semiconductor | MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | ||||
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1,535
In-stock
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Fairchild Semiconductor | MOSFET 800V 10A NChn MOSFET SuperFET II | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 650 mOhms | 2.5 V | 27 nC | Enhancement | SuperFET II | ||||
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812
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 400mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 400 mOhms | 2.5 V | 43 nC | Enhancement | SuperFET II | ||||
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1,210
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 290mOhm D2PAK PKG | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | ||||
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799
In-stock
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Fairchild Semiconductor | MOSFET 800V SuperFET2 N-Chnl Mosfet | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | ||||
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2,712
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 850mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.4 Ohms | 2.5 V | 7.4 nC | Enhancement | SuperFET II | ||||
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1,692
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 3400 mOhm Zener embedded, IPAK PKG | 20 V, 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.4 Ohms | 2.5 V | 7.4 nC | Enhancement | SuperFET II | ||||
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1,209
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 1300 mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | SuperFET II | |||||
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1,239
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm Zener | 20 V, 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 2.5 V | 11 nC | Enhancement | SuperFET II | ||||
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919
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 2.5 V | 6.8 nC | Enhancement | SuperFET II | ||||
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210
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 220mOhm, max die of TO220F PKG | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II |