- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,303
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -50A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 10.5 mOhms | Enhancement | OptiMOS | |||||
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GET PRICE |
15,130
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | OptiMOS | ||
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1,507
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.3 mOhms | - 2 V | 160 nC | Enhancement | ||||
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GET PRICE |
27,700
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | |||
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GET PRICE |
26,250
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.3 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS |
