- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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13,841
In-stock
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onsemi | MOSFET NCH 1.8V Power MOSFE | 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 310 mOhms | 400 mV | 1.8 nC | Enhancement | |||
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4,960
In-stock
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onsemi | MOSFET POWER MOSFET | 10 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 49 mOhms | |||||||
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4,918
In-stock
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onsemi | MOSFET NCH 1.8V DRIVE SERIE | 10 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.5 A | 149 mOhms | 400 mV | 2.8 nC | Enhancement | ||||
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4,995
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 330 mOhms | 1.2 V | 2 nC | Enhancement | ||||
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4,895
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 128 mOhms | 1.2 V | 5.6 nC | Enhancement |
