- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,114
In-stock
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onsemi | MOSFET NFET 2X2 30V 4A 70MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 70 mOhms | Enhancement | |||||
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4,635
In-stock
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onsemi | MOSFET PFET 2X2 20V 4.1A 106MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 100 mOhms | Enhancement | |||||
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302
In-stock
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onsemi | MOSFET NFET 2X2 30V 7.8A 33mOhm | 12 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 20.3 mOhms | Enhancement | |||||
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2,700
In-stock
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onsemi | MOSFET PFET 2X2 20V 9.5A 42MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.8 A | 90 mOhms | - 0.67 V | 13 nC | Enhancement | |||
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1,019
In-stock
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onsemi | MOSFET PFET WDFN6 12V 5.9A 0.025 | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.9 A | 25 mOhms | Enhancement | |||||
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5,980
In-stock
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onsemi | MOSFET NFET 2X2 30V 4A 70MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 70 mOhms | Enhancement |
