- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,551
In-stock
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Fairchild Semiconductor | MOSFET PT8PZ 30/25V VIS with 2.05x2.05 PQFN pkg | 25 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11 mOhms | - 2.6 V | 33 nC | Enhancement | PowerTrench | |||
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5,598
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | |||||
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2,570
In-stock
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Infineon Technologies | MOSFET 20V 1 P-CH HEXFET 31mOhms 12nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 31 mOhms | 12 nC | ||||||||
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1,212
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 22 A | 11.7 mOhms | 0.5 V to 1.1 V | 14 nC | Enhancement | ||||
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3,925
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC | 12 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 15.5 mOhms | 11 nC | ||||||||
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126
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 37mOhms 6.9nC | 20 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 65 mOhms | 6.9 nC | ||||||||
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18,843
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 16mOhms 4.2nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 25 mOhms | 1.35 V to 2.35 V | 4.2 nC | Enhancement | ||||
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13
In-stock
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IR / Infineon | MOSFET MOSFT 20V 8.5A 11.7mOhm 2.5V cpbl | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 11.7 mOhms | 14 nC | Enhancement |
