- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,600
In-stock
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Fairchild Semiconductor | MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 41 mOhms | 3 V | 229 nC | Enhancement | SuperFET II UniFET FRFET | |||
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236
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
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582
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.024 Ohm, 84 A, MDmesh(TM) V Pow, POW... | TO-247-4 | 1 Channel | Si | N-Channel | |||||||||||||||
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395
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 46A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
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598
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||
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102
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
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92
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 46A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
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170
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-4 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 60 mOhms | 2 V | 70 nC | Enhancement | |||||
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164
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
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115
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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66
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49 A | 62 mOhms | 2 V | 93 nC | Enhancement | ||||
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2,798
In-stock
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Wolfspeed / Cree | MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1000 V | 35 A | 65 mOhms | 1.8 V | 35 nC | Enhancement | ||||
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554
In-stock
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Wolfspeed / Cree | MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4 | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1 kV | 22 A | 120 mOhms | 1.8 V | 21.5 nC | Enhancement | ||||
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408
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V 75 mOhm | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 30 A | 75 mOhms | 1.7 V | 51 nC | Enhancement | ||||
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240
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | STMicroelectronics | MOSFET N-CH 650V 0.037Ohm 58A | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 710 V | 58 A | 37 mOhms | 4 V | 143 nC | MDmesh | ||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS |
